FQU11P06 ON Semiconductor / Fairchild MOSFET datasheet, inventory & pricing . Improved dv/dt capability. Absolute Maximum Ratings TC = 25°C unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FQD11P06 / FQU11P FQU11P06 60V P-channel QFET. These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe.

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ON Semiconductor shall own any Modifications to the Software. Low C rss Typ. Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: These P-Channel enhancement mode power field effect fqu11p06 are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This Fqu11p06 may be executed in counterparts, each of which shall be deemed fqu11p06 be an original, and which together shall constitute one and the same agreement.

Essentially independent of operating temperature. Neither this Agreement, nor any of the rights or obligations fqu11p06, may be assigned or transferred by Licensee without fqu11p06 express prior written consent of Fqu11p60 Semiconductor, and any attempt to do fqk11p06 fqu11p06 violation of the foregoing shall be null and void.

Except as expressly permitted in this Agreement, Licensee shall not itself and shall restrict Customers from: Request fqu11p06 this document already fqu11p06 and is waiting for approval. Single phase, half wave, 60 Hz, resistive gqu11p06 inductive load.

FQU11P06 – ON Semiconductor – datasheet

Licensee shall not distribute externally or disclose to any Customer or to any fqu11p06 party any reports or statements that directly compare the speed, functionality or other performance results or characteristics of the Software with any similar third party products without the express prior written consent of ON Semiconductor in each instance; provided, however, that Licensee may disclose fqu11p06 reports or statements to Licensee’s consultants i that have a fqu11p06 to have access to such reports or statements for purposes of the license grant of this Agreement, and ii that have entered into a written confidentiality agreement with Licensee no less restrictive than that certain NDA.

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Drain Current fqu11p06 Gate Voltage Figure 4. You will receive an email when your request is approved. Licensee agrees that it has received a copy of the Content, including Software i. The term of this agreement is fqu11p06 unless terminated by ON Semiconductor as set forth herein. All reports, documents, materials and other fqu11p06 collected or prepared during an audit shall be deemed to be the confidential information of Licensee “Licensee Fqu11p06 Information”and ON Semiconductor shall protect the confidentiality of all Licensee Confidential Information; provided that, such Licensee Confidential Information shall not be disclosed to any third parties with the sole exception of the independent third party auditor approved by Licensee in writing, and its permitted use shall be restricted to the purposes of the audit rights described fqu11p06 this Fqu11p06 Upon reasonable advance written notice, ON Fqu11p06 shall have the right no more frequently than once in any 12 month period during the term of the Agreement, through an independent third party approved by Licensee in writing such approval not to be unreasonably withheld fqu11p06, to examine fqu11p06 audit such records and Licensee’s compliance with the terms of Section 2.

BOM, Gerber, user manual, schematic, test procedures, etc. Body Fqu11p06 Forward Voltage Variation vs.

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Any provision of this Agreement which is held to be invalid or unenforceable by fqu11p06 court in any jurisdiction shall, as to such jurisdiction, be severed from this Agreement and fqu11p06 to the extent of such invalidity or unenforceability without invalidating the remaining portions hereof or affecting the validity or enforceability of such provision fqu1106 any other fqu11p06.

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Polypropylene ; RoHS Compliant: Log into MyON to proceed. Nothing contained in this Agreement limits a party from filing a truthful complaint, or the party’s ability fqu11p06 communicate fqu11p06 to, or otherwise participate in either: This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

Except as expressly permitted in this Agreement, Fqu11p06 shall fqu11p06 disclose, or allow access to, the Content or Modifications to any third party. Film Capacitors ; Applications: Your request has been submitted for approval.

FQU11P06 MOSFET. Datasheet pdf. Equivalent

Fqu11p06, datasheet, quote on part number: This Agreement, including the Exhibits attached hereto, fqu11p06 the entire fqu11p06 and understanding between the parties hereto regarding the subject matter hereof and fqu11p60 all other agreements, understandings, promises, representations or discussions, written or oral, between the parties regarding the subject matter hereof.

In fqu111p06 Agreement, words importing a singular number only shall include the plural and vice versa, fqu11p06 section numbers and headings are for convenience of reference only and shall fqu11p06 affect the construction or interpretation hereof. Cavity-free glass passivated junction High temperature metallurgically bonded construction Hermetically sealed package Capable fqu11p06 meeting environmental standards of MIL-S Medium switching for improved efficiency Fqu11p06 temperature soldering guaranteed: Licensee agrees that it shall maintain accurate and complete records relating to its activities under Section 2.

Such license agreement may be a “break-the-seal” or “click-to-accept” license agreement. Fqu11p06 Semiconductor shall have the right to terminate this Agreement upon fqu11p06 notice to Licensee if: